Photosensitive structures with porous silicon
نویسندگان
چکیده
منابع مشابه
Photosensitive porous silicon based structures
We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics and photosensitivity spectra indicate that for structures with a thin PS layer the photosensitivity is determined by PS/c-Si heterojunctions (HJ), wh...
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Photonic bandgap (PBG) structures have remarkable optical properties that can be exploited for biosensing applications. We describe the fabrication of 1-D PBG biosensors using porous silicon. The optical properties of porous silicon PBGs are sensitive to small changes of refractive index in the porous layers, which makes them a good sensing platform capable of detecting binding of the target mo...
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We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emph...
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Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabric...
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Judson D. Ryckman, Marco Liscidini, J. E. Sipe, and S. M. Weiss Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Dipartimento di Fisica “A. Volta,” Università degli Studi di Pavia, via Bassi 6, 27100 Pavia, Italy Department of Physics and Institute for Optical Sciences, University of Toronto, 60 St. George St. Toronto M5S 1A7 Onta...
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ژورنال
عنوان ژورنال: Electronics and Communications
سال: 2012
ISSN: 2312-1807,1811-4512
DOI: 10.20535/2312-1807.2012.17.4.218984